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ACE634 Scheda tecnica(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE634 Scheda tecnica(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 9 page  ACE634 20V Complementary Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE634 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features N-Channel VDS(V)=20V ID=4A RDS(ON) <35mΩ (V GS=4.5V) <42 mΩ (V GS=2.5V) P-Channel VDS(V)=-20V ID=-2.5A RDS(ON) <85 mΩ (V GS=-4.5V) <115 mΩ (V GS=-2.5V) Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit N-Channel P-Channel Drain-Source Voltage VDSS 20 -20 V Gate-Source Voltage VGSS ±12 ±12 V Continuous Drain Current (TJ=150℃) *AC TA=25℃ ID 4 -2.5 A TA=70℃ 3.2 -2 Drain Current (pulse) * B IDM 13 -13 A Power Dissipation TA=25℃ PD 1.1 1.1 W TA=70℃ 0.7 0.7 Operating Junction Temperature TJ -55 to 150 OC Storage Temperature Range TSTG -55 to 150 OC |
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