ACE2303B datasheet(2/5 Pages) ACE

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ACE2303B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Off characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

Gate-Body Leakage, Forward

IGSSF

VGS=+20V, VDS=0V

100

Gate-Body Leakage, Reverse

IGSSR

VGS=-20V, VDS=0V

-100

On characteristics

(2)

Static Drain-Source On-Resistance

RDS(ON)

VGS=-4.5V, ID=-3A

VGS=-10V, ID=-4.1A

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-1

-1.6

-2.0

Forward Transconductance

gFS

VDS=-5V, ID=-2.8A

Switching characteristics

(3)

Turn-On Delay Time

Td(on)

VDD=-6V,RL=6Ω

ID=-1A, VGEN=-4.5V

RG=6Ω

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Dynamic characteristics

(3)

Input Capacitance

Ciss

VDS=-6V, VGS=0V

f=1.0MHz

680

Output Capacitance

Coss

Feedback Capacitance

Crss

Drain-source diode characteristics and maximum ratings

Drain-Source Diode Forward

Current

(4)

-1.35

Drain-Source Diode Forward

Voltage

(2)

VSD

IS=-1A,VGS=0V

-0.6

-0.8

-1

Note: 1. Pulse width limited by maximum junction temperature

2. Pulse test: PW≦300us, duty cycle≦2%

3. Guaranteed by design, not subject to production testing.

4. Surface Mounted on FR4 Board, t < 5 sec.

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