ACE9435B datasheet(2/5 Pages) ACE

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ACE9435B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Ordering information

ACE9435B XX + H

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Off characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

-36

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V

0.02

-1

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±1.5

±100

On characteristics

Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-4.6A

mΩ

VGS=-4.5V, ID=-2A

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-1

-1.46

-3

Forward Transconductance

gFS

VDS=-5V, ID=-6A

Switching

Turn-On Delay Time

Td(on)

VDS=-15V,RL=2.5Ω

RGEN=3Ω, VGS=-10V

8.6

Turn-Off Delay Time

td(off)

28.2

Dynamic Characteristics

Input Capacitance

Ciss

VDS=-15V, VGS=0V

f=1MHz

550

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Drain-source diode characteristics and maximum ratings

Diode Forward Voltage

VSD

VGS=0V, IS=-1A

-0.81

Note: 1. The value of PD is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with

TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based

on the DC thermal resistance rating.

2. Repetitive rating, pulse width limited by junction temperature.

FM : SOP-8

Pb - free

Halogen - free

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