STPS40M100C datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

STPS40M100C

Characteristics

Doc ID 15522 Rev 3

3/8

Figure 2.

Average forward power dissipation

versus average forward current

(per diode)

Figure 3.

Average forward current per diode

versus ambient temperature

(

δ = 0.5)

121416

1820

2224

2628

F(AV)(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

I ()(A)

FAV

100

125

150

F(AV)(A)

th(j-a)=Rth(j-c)

th(j-a)=15 °C/W

δ=tp/T

(°C)

amb

Figure 4.

Normalized avalanche power

derating versus pulse duration

Figure 5.

Normalized avalanche power

derating versus junction

temperature

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.001

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(T )

(25°C)

ARM

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values per diode)

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration

IM(A)

100

150

200

250

300

350

1.E-03

1.E-02

1.E-01

1.E+00

c=25 °C

c=75 °C

c=125 °C

δ =0.5

t(s)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

STPS40M100C Scheda tecnica(PDF) 3 Page - STMicroelectronics

STPS40M100C Scheda tecnica(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

Scheda tecnica Scarica

Link URL