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STPS30H100C Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STPS30H100C Scheda tecnica(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Characteristics STPS30H100C 4/10 Doc ID 6347 Rev 8 Figure 9. Forward voltage drop versus forward current (maximum values, per diode) Figure 7. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 8. Junction capacitance versus reverse voltage applied (typical values, per diode) 0 10 203040 5060708090 100 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 2E+0 I (mA) R V (V) R T =125°C j T =25°C j 1 2 5 10 20 50 100 100 200 500 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 200 I (A) FM V (V) FM T =125°C j T =25°C j |
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