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BD239 Scheda tecnica(PDF) 1 Page - Comset Semiconductor |
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BD239 Scheda tecnica(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() NPN BD239 – A – B – C 22/10/2012 COMSET SEMICONDUCTORS 1/3 M ME ED DIIU UM M P PO OW WE ER R L LIIN NE EA AR R A AN ND D S SW WIIT TC CH HIIN NG G A AP PP PL LIIC CA AT TIIO ON NS S.. The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications. The PNP complements are BD240, A, B, C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BD239 45 V BD239A 60 BD239B 80 BD239C 100 VCER Collector-Emitter Voltage (RBE = 100 Ω) BD239 55 V BD239A 70 BD239B 90 BD239C 115 VCBO Collector-Base Voltage BD239 45 V BD239A 60 BD239B 80 BD239C 100 VEBO Emitter-Base Voltage 5.0 V IC Collector Current IC 3 A ICM 7 IB Base Current 0.5 A PT Power Dissipation @ Tamb = 25° C 30 W @ Tcase = 25° C 30 W TJ Junction Temperature 150 °C TS Storage Temperature -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-amb Thermal Resistance, Junction-ambient 70 °C/W RthJ-case Thermal Resistance, Junction-case 4.17 °C/W |
Codice articolo simile - BD239 |
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