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BD239 Scheda tecnica(PDF) 1 Page - Comset Semiconductor

Il numero della parte BD239
Spiegazioni elettronici  MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
PDF  3 Pages
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Produttore elettronici  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BD239 Scheda tecnica(HTML) 1 Page - Comset Semiconductor

  BD239 Datasheet HTML 1Page - Comset Semiconductor BD239 Datasheet HTML 2Page - Comset Semiconductor BD239 Datasheet HTML 3Page - Comset Semiconductor  
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NPN BD239 – A – B – C
22/10/2012
COMSET SEMICONDUCTORS
1/3
M
ME
ED
DIIU
UM
M P
PO
OW
WE
ER
R L
LIIN
NE
EA
AR
R A
AN
ND
D S
SW
WIIT
TC
CH
HIIN
NG
G
A
AP
PP
PL
LIIC
CA
AT
TIIO
ON
NS
S..
The BD239, A, B, C are mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The PNP complements are BD240, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage
BD239
45
V
BD239A
60
BD239B
80
BD239C
100
VCER
Collector-Emitter Voltage (RBE = 100 Ω)
BD239
55
V
BD239A
70
BD239B
90
BD239C
115
VCBO
Collector-Base Voltage
BD239
45
V
BD239A
60
BD239B
80
BD239C
100
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
IC
3
A
ICM
7
IB
Base Current
0.5
A
PT
Power Dissipation
@ Tamb = 25° C
30
W
@ Tcase = 25° C
30
W
TJ
Junction Temperature
150
°C
TS
Storage Temperature
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-amb
Thermal Resistance, Junction-ambient
70
°C/W
RthJ-case
Thermal Resistance, Junction-case
4.17
°C/W


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