BD246B datasheet(1/3 Pages) COMSET

Il numero della parte	BD246B

Spiegazioni elettronici	PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

PDF	3 Pages

Scroll/Zoom	100%

Produttore elettronici	COMSET [Comset Semiconductor]

Homepage	http://comset.halfin.com

Logo

1 / 3 page

BD246, A, B, C

25/09/2012

COMSET SEMICONDUCTORS

1/3

P

PN

NP

P S

SIIN

NG

GL

LE

E--D

DIIF

FF

FU

US

SE

ED

D M

ME

ES

SA

A S

SIIL

LIIC

CO

ON

N P

PO

OW

WE

ER

R

T

TR

RA

AN

NS

SIIS

ST

TO

OR

RS

S

The BD246 series are PNP power transistors in a TO3PN envelope.

They are the power transistors for power amplifier and high-speed-switching applications.

The complementary is BD245, A, B, C

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCEO

Collector-Emitter Voltage (IC = -30mA)

BD246

-45

V

BD246A

-60

BD246B

-80

BD246C

-100

VCER

Collector-Emitter Voltage (RBE = 100 Ω)

BD246

-55

V

BD246A

-70

BD246B

-90

BD246C

-115

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current

IC

-10

A

ICM

-15

IB

Base Current

-3

A

PT

Power Dissipation

Tmb = 25° C

80

Watts

TJ

Junction Temperature

-65 to +150

°C

TS

Storage Temperature

-65 to +150

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJC

Junction to Case Thermal Resistance

1.56

°C / W

RthJA

Junction to free air Thermal Resistance

42

°C / W

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