BD434 datasheet(1/3 Pages) COMSET

Il numero della parte	BD434

Spiegazioni elettronici	SILICON PNP POWER TRANSISTORS

PDF	3 Pages

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Produttore elettronici	COMSET [Comset Semiconductor]

Homepage	http://comset.halfin.com

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1 / 3 page

BD434 – BD436 – BD438

25/09/2012

COMSET SEMICONDUCTORS

1 | 3

27/08/2012

SILICON PNP POWER TRANSISTORS.

The BD434-BD436-BD438 are PNP Transistors mounted in Jedec TO-126 plastic package.

They are recommended for use in medium power linear and switching applications.

NPN complements are BD433-BD435-BD437.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCBO

Collector-Base Voltage (IE= 0)

BD434

-22

V

BD436

-32

BD438

-45

VCEO

Collector-Emitter Voltage (IB= 0)

BD434

-22

V

BD436

-32

BD438

-45

VEBO

Emitter-Base Voltage (Ic= 0)

-5

V

IC

Collector Current

-4

A

ICM

Collector Current Peak

-7

IB

Base Current

-1

A

PC

Total power Dissipation

TC = 25°C

36

W

TJ

Junction Temperature

150

°C

TStg

Storage Temperature

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-c

Thermal Resistance, Junction-Case

3.5

°C/W

RthJ-a

Thermal Resistance, Junction-ambient in free air

100

°C/W

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