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BD437 Scheda tecnica(PDF) 1 Page - Comset Semiconductor |
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BD437 Scheda tecnica(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() NPN BD433 – BD435 – BD437 25/09/2012 COMSET SEMICONDUCTORS 1 | 3 SILICON NPN POWER TRANSISTORS. The BD433-BD435-BD437 are NPN Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications. PNP complements are BD434-BD436-BD438. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage (IE= 0) BD433 22 V BD435 32 BD437 45 VCEO Collector-Emitter Voltage (IB= 0) BD433 22 V BD435 32 BD437 45 VEBO Emitter-Base Voltage (Ic= 0) 5 V IC Collector Current 4 A ICM Collector Current Peak 7 IB Base Current 1 A PC Total power Dissipation TC = 25°C 36 W TJ Junction Temperature 150 °C TStg Storage Temperature -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-c Thermal Resistance, Junction-Case 3.5 °C/W RthJ-a Thermal Resistance, Junction-ambient in free air 100 °C/W |
Codice articolo simile - BD437 |
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