BUZ74 datasheet(2/4 Pages) COMSET

2 / 4 page

BUZ74

01/10/2012

COMSET SEMICONDUCTORS

2/4

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VDSS

Drain-Source Breakdown

Voltage

ID= 250 µA, VGS= 0 V

500

VGS(th)

Gate-threshold Voltage

ID=1 mA, VGS= VDS

2.1

IDSS

Zero Gate Voltage Drain

Current

VDS= 500 V, VGS= 0 V

Tj= 25 °C

µA

VDS= 500 V, VGS= 0 V

Tj= 125 °C

100

IGSS

Gate-Source leakage Current

VGS= 20 V, VDS= 0 V

100

RDS(on)

Drain-Source on Resistance

ID= 1.5 A, VGS= 10 V

2.5

Ω

DYNAMIC CHARACTERISTICS

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

gfs

Transconductance

VDS = 2*ID*RDS(on)max

ID= 1.5 A

1.8

2.1

CISS

Input Capacitance

VGS= 0 V, VDS= 25 V

f= 1MHz

450

675

COSS

Output Capacitance

CRSS

Reverse transfer Capacitance

td(on)

Turn-on Delay Time

VDD= 30 V, VGS= 10 V

ID= 2.1 A, RGS= 50 Ω

Rise time

td(off)

Turn-off Delay Time

Fall Time

REVERSE DIODE

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

Inverse Diode Continuous

Forward Current.

TC = 25°C

2.4

ISM

Inverse diode direct current,

pulsed.

TC = 25°C

9.5

VSD

Inverse Diode Forward voltage

VGS = 0 V, IF = 4.8 A

1.3

Trr

Reverse Recovery Time

VR = 100 V, IF = 2.4 A

di/dt = 100 A/µs

300

Qrr

Reverse Recovery Charge

2.5

µC

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