TIC236C datasheet(2/3 Pages) COMSET

2 / 3 page

TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M,

TIC236N, TIC236S

02/10/2012

COMSET SEMICONDUCTORS

2 | 3

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ Max Unit

IDRM

Repetitive peak

off-state current

VD = Rated VDRM, , IG = 0

TC = 110°C

±2

IGT

Gate trigger

current

Vsupply = +12 V†, RL = 10 Ω, t

p(g) = > 20 µs

Vsupply = +12 V†, RL = 10 Ω, t

p(g) = > 20 µs

-19

-50

Vsupply = -12 V†, RL = 10 Ω, t

p(g) = > 20 µs

-16

-50

Vsupply = -12 V†, RL = 10 Ω, t

p(g) = > 20 µs

VGT

Gate trigger

voltage

Vsupply = +12 V†, RL = 10 Ω, t

p(g) = > 20 µs

0.8

Vsupply = +12 V†, RL = 10 Ω, t

p(g) = > 20 µs

-0.8

-2

Vsupply = -12 V†, RL = 10 Ω, t

p(g) = > 20 µs

-0.8

-2

Vsupply = -12 V†, RL = 10 Ω, t

p(g) = > 20 µs

0.9

Holding current

Vsupply = +12 V†, IG = 0

initiating ITM = 100 mA

Vsupply = -12 V†, IG = 0

initiating ITM = -100 mA

-22

-40

Latching current

Vsupply = +12 V† (seeNote5)

Vsupply = -12 V† (seeNote5)

-80

VTM

Peak on-state

voltage

ITM = ± 17 A, IG = 50 mA (see Note4)

±1.4

±1.7

dv/dt

Critical rate of rise

of off-state voltage

VDRM = Rated VDRM, IG = 0

TC = 110°C

±400

V/µs

di/dt

Critical rate of rise

of off-state current

VDRM = Rated VDRM, IGT = 50 mA,

diG/dt = 50mA/µs, TC = 110°C

±100

A/µs

dv/dt©

Critical rise of

communication

voltage

VDRM = Rated VDRM, IT = 1.4 I

T(RMS)

di/dt = 0.5 I

T(RMS) /ms, TC = 80°C

±1.2

±9

V/µs

† All voltages are whit respect to Main Terminal 1.

Note1: These values apply bidirectionally for any value of resistance between the gate and Main

Terminal 1.

Note2: This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C

derate linearly to 110°C case temperature at the rate of 300 mA/°C.

Note3: This value applies for one 50-Hz full-sine-wave when the device is operating at (or below)

the rated value of peak reverse voltage and on-state current. Surge may be repeated after

the device has returned to original thermal equilibrium.

Note4: This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %,

voltage-sensing contacts, separate from the courrent-carrying contacts are located within

3.2mm from de device body.

Note5: he triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator

with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.

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