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TIC236E Scheda tecnica(PDF) 1 Page - Comset Semiconductor |
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TIC236E Scheda tecnica(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S 02/10/2012 COMSET SEMICONDUCTORS 1 | 3 SEMICONDUCTORS SILICON TRIACS • High current triacs • 12 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 50 mA (Quadrants 1-3) • Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit A B C D E M S N VDRM Repetitive peak off-state voltage (see Note1) 100 200 300 400 500 600 700 800 V IT(RMS) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) 12 A ITSM Peak on-state surge current full-sine-wave (see Note3) 100 A IGM Peak gate current ± 1 A TC Operating case temperature range -40 to +110 °C Tstg Storage temperature range -40 to +125 °C TL Lead temperature 1.6 mm from case for 10 seconds 230 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit R∂JC Junction to case thermal resistance ≤ 2 °C/W R∂JA Junction to free air thermal resistance ≤ 62.5 |
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