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UD7018 Scheda tecnica(PDF) 2 Page - Unitpower Technology Limited

Il numero della parte UD7018
Spiegazioni elettronici  N-Ch 75V Fast Switching MOSFETs
PDF  4 Pages
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Produttore elettronici  UNITPOWER [Unitpower Technology Limited]
Homepage  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UD7018 Scheda tecnica(HTML) 2 Page - Unitpower Technology Limited

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N-Ch 75V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
75
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.066
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=20A
---
9
11
m
Ω
VGS(th)
Gate Threshold Voltage
2
---
4
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =250uA
---
-5.64
---
mV/℃
VDS=60V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=60V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=20A
---
52
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
3
Ω
Qg
Total Gate Charge (10V)
---
106
---
Qgs
Gate-Source Charge
---
19.6
---
Qgd
Gate-Drain Charge
VDS=15V , VGS=10V , ID=15A
---
16.5
---
nC
Td(on)
Turn-On Delay Time
---
19.4
---
Tr
Rise Time
---
11.4
---
Td(off)
Turn-Off Delay Time
---
118.4
---
Tf
Fall Time
VDD=30V , VGS=10V , RG=3.3Ω,
ID=1A
---
11.2
---
ns
Ciss
Input Capacitance
---
7760
---
Coss
Output Capacitance
---
320
---
Crss
Reverse Transfer Capacitance
VDS=15V , VGS=0V , f=1MHz
---
210
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=30A
58
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
---
---
62
A
ISM
Pulsed Source Current
2,6
VG=VD=0V , Force Current
---
---
130
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=A , TJ=25℃
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=52A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
UD7018



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