ACE2303 datasheet(2/7 Pages) ACE

Il numero della parte	ACE2303

Spiegazioni elettronici	P-Channel Enhancement Mode MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Produttore elettronici	ACE [ACE Technology Co., LTD.]

Homepage	http://www.ace-ele.com

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ACE2303

P-Channel Enhancement Mode MOSFET

VER 1.3

Packaging Type

SOT-23-3

Ordering information

ACE2303 XX + H

Electrical Characteristics

(TA=25℃, Unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-10uA

-30

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-1.0

-3.0

Gate Leakage Current

IGSS

VDS=0.V, VGS=±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

VDS=-30V, VGS=0V TJ=55℃

-10

On-State Drain Current

ID(ON)

VDS≦-5V, VGS=-10V

-6

Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-2.6A

0.095

0.130

VGS=-4.5V, ID=-2.0A

0.125

0.180

Forward Transconductance

gfs

VDS=-10V, ID=-1.7A

2.4

Diode Forward Voltage

VSD

IS=-1.25A, VGS=0V

-0.8

-1.2

Dynamic

Total Gate Charge

VDS=-15V, VGS=-10V,

ID≡-1.7A

5.8

Gate-Source Charge

Qgs

0.8

Gate-Drain Charge

Qgd

1.5

Input Capacitance

Ciss

VDS=-15V, VGS=0V,

f=1MHz

226

Output Capacitance

Coss

SOT-23-3

Description

Gate

Source

Drain

BM: SOT-23-3

Halogen - free

Pb - free

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