ACE3413 datasheet(2/7 Pages) ACE

Il numero della parte	ACE3413

Spiegazioni elettronici	P-Channel Enhancement Mode MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Produttore elettronici	ACE [ACE Technology Co., LTD.]

Homepage	http://www.ace-ele.com

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ACE3413

P-Channel Enhancement Mode MOSFET

VER 1.4

Packaging Type

SOT-23-3L

Ordering information

ACE3413 XX + H

Electrical Characteristics

(TA=25℃, Unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-20

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.35

-0.8

Gate Leakage Current

IGSS

VDS=0.V, VGS=±12V

±100

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0V

-1

VDS=-20V, VGS=0V TJ=55℃

-5

On-State Drain Current

ID(ON)

VDS≦-5V, VGS=-4.5V

-6

Drain-Source On-Resistance

RDS(ON)

VGS=-4.5V, ID=-3.4A

0.076

0.095

VGS=-2.5V, ID=-2.4A

0.097

0.120

VGS=-1.8V, ID=-1.7A

0.123

0.145

VGS=-1.25V, ID=-1.0A

0.185

0.210

Forward Transconductance

Gfs

VDS=-5.0V, ID=-2.8A

Diode Forward Voltage

VSD

IS=-1.5A, VGS=0V

-0.8

-1.2

Dynamic

Total Gate Charge

VDS=-6V, VGS=-4.5V,

ID≡-2.8A

4.8

Gate-Source Charge

Qgs

1.0

Gate-Drain Charge

Qgd

1.0

SOT-23-3L

Description

Gate

Source

Drain

BM: SOT-23-3L

Pb - free

Halogen-free

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