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H8205 Scheda tecnica(PDF) 2 Page - Hi-Sincerity Mocroelectronics

Il numero della parte H8205
Spiegazioni elettronici  Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
PDF  4 Pages
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Produttore elettronici  HSMC [Hi-Sincerity Mocroelectronics]
Homepage  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics

H8205 Scheda tecnica(HTML) 2 Page - Hi-Sincerity Mocroelectronics

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200904
Issued Date : 2009.02.27
Revised Date : 2010.07.02
Page No. : 2/4
H8205
HSMC Product Specification
Electrical Characteristics (T
A=25C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
 Static
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
18
20
-
V
RDS(on)
Drain-Source On-State Resistance
VGS=2.5V, ID=5.2A
-
-
40
m
VGS=4.5V, ID=6A
-
-
25
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1.5
V
IDSS
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
-
-
1
uA
IGSS
Gate-Body Leakage Current
VGS=8V, VDS=0V
-
-
100
nA
gFS
Forward Transconductance
VDS=10V, ID=6A
7
13
-
S
 Dynamic
Qg
Total Gate Charge
VDS=10V, ID=6A, VGS=4.5V
-
4.86
-
nC
Qgs
Gate-Source Charge
-
0.92
-
Qgd
Gate-Drain Charge
-
1.4
-
Ciss
Input Capacitance
VDS=8V, VGS=0V, f=1MHz
-
562
-
pF
Coss
Output Capacitance
-
106
-
Crss
Reverse Transfer Capacitance
-
75
-
td(on)
Turn-on Delay Time
VDD=10V, ID=1A, VGS=4.5V
RGEN=6
-
8.1
-
ns
tr
Turn-on Rise Time
-
9.95
-
td(off)
Turn-off Delay Time
-
21.85
-
tf
Turn-off Fall Time
-
5.35
-
 Drain-Source Diode Characteristics
IS
Maximum Diode Forward Current
-
-
1.7
A
VSD
Drain-Source Diode Forward Voltage
VGS=0V, IS=1.7A
-
-
1.2
V
Note: Pulse Test: Pulse Width
300us, Duty Cycle2%
G
S
D
R
D
V
DD
V
OUT
V
IN
R
G
V
GEN
Switching
Test Circuit
t
d(on)
t
on
t
r
90%
10%
50%
10%
Input, V
IN
Output, V
OUT
t
d(off)
t
off
t
f
90%
10%
Inverted
90%
50%
Pulse Width
Switching
Waveforms



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