27291SL datasheet(13/20 Pages) FREESCALE

13 / 20 page

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT

Figure 19. DVB--T (8k OFDM) Drain Efficiency, Power Gain and

IMD Shoulder versus Output Power — 470--860 MHz

5--30

Pout, OUTPUT POWER (WATTS) AVG.

--5

--15

Gps

VDD = 50 Vdc, IDQ = 700 mA

DVB--T (8k OFDM), 64 QAM Data

Carrier Modulation, 5 Symbols

ηD

IMD(1)

470 MHz

665 MHz

--10

--20

860 MHz

470 MHz

665 MHz

860 MHz

470 MHz

860 MHz

200

120

160

--25

(1) Intermodulation distortion shoulder measurement made using

delta marker at 4.2 MHz offset from center frequency.

TC =35°C

f, FREQUENCY (MHz)

Figure 20. Broadband Power Gain and IRL versus Frequency

900

450

VDD =50 Vdc,Pout = 125 W Avg.

IDQ = 1400 mA, DVB--T (8k OFDM)

64 QAM Data Carrier Modulation, 5 Symbols

--12

--3

500

600

700

800

--4

--11

Gps

IRL

75°C

550

650

750

850

--1

--2

--5

--6

--10

--9

--7

--8

75°C

50°C

35°C

f, FREQUENCY (MHz)

Figure 21. Broadband Drain Efficiency and IMD Shoulder versus Frequency

900

450

VDD =50 Vdc,Pout = 125 W Avg., IDQ = 1400 mA

DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols

--35

--15

--19

--23

--17

--21

TC =35°C

IMD(1)

ηD

35°C

75°C

500

600

700

800

(1) Intermodulation distortion shoulder measurement made using

delta marker at 4.2 MHz offset from center frequency.

--25

--29

--27

--33

--31

550

650

750

850

50°C

75°C

27291SL Scheda tecnica(PDF) 13 Page - Freescale Semiconductor, Inc

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