AOU2N60 datasheet(2/6 Pages) AOSMD

2 / 6 page

AOD2N60/AOU2N60

Symbol

Min

Typ

Max

Units

600

700

BVDSS

/∆TJ

0.56

IGSS

Gate-Body leakage current

±100

VGS(th)

Gate Threshold Voltage

4.5

RDS(ON)

3.6

4.4

Ω

gFS

3.5

VSD

0.79

Maximum Body-Diode Continuous Current

ISM

Ciss

215

270

325

Coss

Crss

2.2

2.8

3.4

3.5

4.4

6.6

Ω

9.5

Qgs

1.9

Qgd

4.7

tD(on)

17.2

14.3

tD(off)

trr

154

185

Qrr

0.8

0.96

µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V

Maximum Body-Diode Pulsed Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

Turn-On Rise Time

Diode Forward Voltage

Turn-Off DelayTime

VGS=10V, VDS=300V, ID=2A,

RG=25Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=480V, ID=2A

Gate Source Charge

Gate Drain Charge

VDS=5V ID=250µA

VDS=480V, TJ=125°C

IS=1A,VGS=0V

VDS=40V, ID=1A

Forward Transconductance

DYNAMIC PARAMETERS

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V

VDS=0V, VGS=±30V

IDSS

Zero Gate Voltage Drain Current

VDS=600V, VGS=0V

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

BVDSS

µA

Body Diode Reverse Recovery Time

Static Drain-Source On-Resistance

VGS=10V, ID=1A

Reverse Transfer Capacitance

IF=2A,dI/dt=100A/µs,VDS=100V

VGS=0V, VDS=25V, f=1MHz

SWITCHING PARAMETERS

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in

setting the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C.

G.These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

H. L=60mH, IAS=2A, VDD=150V, RG=10Ω, Starting TJ=25°C

Rev 5: Nov 2010

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