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STP210N75F6 Scheda tecnica(PDF) 7 Page - STMicroelectronics

Il numero della parte STP210N75F6
Spiegazioni elettronici  N-channel 75 V, 3 mΩ, 120 A TO-220 STripFET™VI DeepGATE??Power MOSFET
PDF  13 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP210N75F6 Scheda tecnica(HTML) 7 Page - STMicroelectronics

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STP210N75F6
Electrical characteristics
Doc ID 018507 Rev 1
7/13
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10.
Normalized gate threshold voltage
vs temperature
Figure 11.
Normalized on resistance vs
temperature
Figure 12.
Source-drain diode forward
characteristics
VGS
6
4
2
0
0
50
Qg(nC)
(V)
200
8
100
150
10
VDD=37.5V
ID=120A
12
AM09034v1
C
6000
4000
2000
0
0
20
VDS(V)
(pF)
10
8000
30
Ciss
Coss
Crss
10000
12000
14000
50
40
60
70
AM09035v1
VGS(th)
0.8
0.6
0.4
0.2
-75
TJ(°C)
(norm)
-25
1.0
75
25
125
175
1.2
ID=250µA
AM09036v1
RDS(on)
1.7
1.2
0.7
0.2
-75
TJ(°C)
(norm)
-25
75
25
125
175
2.2
ID=60A
VGS=10V
AM09037v1
VSD
0
20
ISD(A)
(V)
10
50
30
40
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ=-55°C
TJ=175°C
TJ=25°C
AM09038v1



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