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AS6C3216 Scheda tecnica(PDF) 10 Page - Alliance Semiconductor Corporation

Il numero della parte AS6C3216
Spiegazioni elettronici  32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
PDF  13 Pages
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Produttore elettronici  ALSC [Alliance Semiconductor Corporation]
Homepage  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS6C3216 Scheda tecnica(HTML) 10 Page - Alliance Semiconductor Corporation

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AS6C3216
Rev. 1.0
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
Alliance Memory, Inc.
9
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VCC for Data Retention
VDR
CE#
≧VCC - 0.2V or CE2≦0.2V
1.2
-
3.6
V
Data Retention Current
IDR
VCC = 1.2V
CE#
≧VCC-0.2V or CE2≦0.2V
other pins at 0.2V or VCC-0.2V
-SL
-
8
80
µA
-SLI
-
8
120
µA
Chip Disable to Data
Retention Time
tCDR
See Data Retention
Waveforms (below)
0
-
-
ns
Recovery Time
tR
tRC*
-
-
ns
tRC* = Read Cycle Time
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) (CE# controlled)
Vcc
CE#
VDR ¡Ù 1.2V
CE# ¡Ù Vcc-0.2V
Vcc(min.)
VIH
tR
tCDR
VIH
Vcc(min.)
Low Vcc Data Retention Waveform (2) (CE2 controlled)
Vcc
CE2
VDR ¡Ù 1.2V
CE2 ¡Ø 0.2V
Vcc(min.)
VIL
tR
tCDR
VIL
Vcc(min.)
Low Vcc Data Retention Waveform (3) (LB#, UB# controlled)
Vcc
LB#,UB#
VDR ¡Ù 1.2V
LB#,UB# ¡Ù Vcc-0.2V
Vcc(min.)
VIH
tR
tCDR
VIH
Vcc(min.)



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