BAS21W_SER_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 9 October 2009

6 of 11

NXP Semiconductors

BAS21W series

High-voltage switching diodes

8.

Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard

Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

FR4 PCB, standard footprint

(1) Single diode loaded.

(2) Double diode loaded.

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

Fig 5.

Forward current as a function of ambient

temperature; derating curve

mbg447

04

8

6

2

1.0

0.8

0.2

0.6

0.4

(pF)

0

200

150

50

100

006aab214

100

200

300

(mA)

0

(2)

(1)

Fig 6.

Reverse recovery time test circuit and waveforms

trr

(1)

t

output signal

t

10 %

90 %

input signal

D.U.T.

SAMPLING

OSCILLOSCOPE

mga881