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AP4002P Scheda tecnica(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP4002P Scheda tecnica(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 6 page ![]() Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 AP4002S/P 0 0 1 10 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off)tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 1 100 10000 1 5 9 1317 2125 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 10 12 14 0 4 8 12 16 Q G , Total Gate Charge (nC) I D =2A V DS =480V |
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