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AP9960GD Scheda tecnica(PDF) 1 Page - Advanced Power Electronics Corp.

Il numero della parte AP9960GD
Spiegazioni elettronici  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Produttore elettronici  A-POWER [Advanced Power Electronics Corp.]
Homepage  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9960GD Scheda tecnica(HTML) 1 Page - Advanced Power Electronics Corp.

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Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼
▼
▼
▼ Low On-Resistance
BVDSS
40V
▼
▼
▼
▼ Fast Switching Speed
RDS(ON)
25mΩ
▼
▼
▼
▼ PDIP-8 Package
ID
7A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
200528031
AP9960GD
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
40
Gate-Source Voltage
± 20
Continuous Drain Current
3
7
Continuous Drain Current
3
5.6
Pulsed Drain Current
1
20
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
D2
S2
G1
D1
S1
D1
D1
D2
D2
S1
G1
S2
G2
PDIP-8


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