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MCP6V31UT Scheda tecnica(PDF) 3 Page - Microchip Technology |
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MCP6V31UT Scheda tecnica(HTML) 3 Page - Microchip Technology |
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3 / 40 page ![]() © 2012 Microchip Technology Inc. DS25127A-page 3 MCP6V31/1U 1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings † VDD –VSS .................................................................................................................................................................6.5V Current at Input Pins ..............................................................................................................................................±2 mA Analog Inputs (VIN+ and VIN–) (Note 1) .....................................................................................VSS – 1.0V to VDD+1.0V All other Inputs and Outputs .......................................................................................................VSS – 0.3V to VDD+0.3V Difference Input voltage .................................................................................................................................|VDD –VSS| Output Short Circuit Current ........................................................................................................................... Continuous Current at Output and Supply Pins ......................................................................................................................±30 mA Storage Temperature .............................................................................................................................-65°C to +150°C Maximum Junction Temperature .......................................................................................................................... +150°C ESD protection on all pins (HBM, CDM, MM) ........................................................................................... ≥ 2kV, 1.5kV, 400V Note 1: See Section 4.2.1, Rail-to-Rail Inputs. 1.2 Specifications †Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/3,VOUT =VDD/2, VL =VDD/2, RL = 100 kΩ to VL and CL = 20 pF (refer to Figure 1-4 and Figure 1-5). Parameters Sym. Min. Typ. Max. Units Conditions Input Offset Input Offset Voltage VOS -8 — +8 µV TA = +25°C Input Offset Voltage Drift with Temperature (Linear Temp. Co.) TC1 -50 — +50 nV/°C TA = -40 to +125°C (Note 1) Input Offset Voltage Quadratic Temp. Co. TC2 —±0.08 — nV/°C2 TA = -40 to +125°C Power Supply Rejection PSRR 120 135 — dB Input Bias Current and Impedance Input Bias Current IB —+5 — pA Input Bias Current across Temperature IB —+20 — pA TA = +85°C IB 0+2.9 +5 nA TA = +125°C Input Offset Current IOS —±130 — pA Input Offset Current across Temperature IOS —±140 — pA TA = +85°C IOS -1 ±0.4 +1 nA TA = +125°C Common Mode Input Impedance ZCM —1013||6 — Ω||pF Differential Input Impedance ZDIFF —1013||6 — Ω||pF Note 1: For Design Guidance only; not tested. 2: Figure 2-18 shows how VCML and VCMH changed across temperature for the first production lot. |
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