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IXTH30N60P Scheda tecnica(PDF) 4 Page - IXYS Corporation |
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IXTH30N60P Scheda tecnica(HTML) 4 Page - IXYS Corporation |
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4 / 6 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS Fig. 13. Maximum Transient Thermal Resistance 0.01 0.10 1.00 0.1 1 10 100 1000 Pulse Width - milliseconds Fig. 11. Capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 V D S - Volts Ciss Coss Crss f = 1MHz Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 Q G - nanoCoulombs VDS = 300V ID = 15A IG = 10mA Fig. 9. Source Curre nt vs . Source -To-Drain V oltage 0 10 20 30 40 50 60 70 80 90 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 V S D - Volts TJ = 125º C TJ = 25º C Fig. 12. Forw ard-Bias Safe Operating Area 1 10 100 10 100 1000 V D S - Volts 100µs 1m s DC TJ = 150ºC TC = 25ºC RDS(on) Limit 10m s 25µs |
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