IXTP3N100P datasheet(4/4 Pages) IXYS

Il numero della parte	IXTP3N100P

Spiegazioni elettronici	Polar VHVTM Power MOSFET N-Channel Enhancement Mode

PDF	4 Pages

Scroll/Zoom	100%

Produttore elettronici	IXYS [IXYS Corporation]

Homepage	http://www.ixys.com

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4 / 4 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA3N100P IXTP3N100P

IXTH3N100P

IXYS REF: T_3N100P(3C)10-31-06

Fig. 7. Input Admittance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

33.5

44.5

55.5

6.5

VGS - Volts

TJ = 125ºC

25ºC

-40ºC

Fig. 8. Transconductance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0.5

1.5

2.5

3.5

ID - Amperes

TJ = - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0.4

0.5

0.6

0.7

0.8

0.9

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 10. Gate Charge

QG - NanoCoulombs

VDS = 500V

I D = 1.5A

I G = 1mA

Fig. 11. Capacitance

100

1,000

10,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal

Resistance

0.01

0.10

1.00

10.00

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

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