STP12N65M5 datasheet(3/23 Pages) STMICROELECTRONICS

3 / 23 page

STD/F/I/P/U12N65M5

Electrical ratings

Doc ID 15428 Rev 5

3/23

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, IPAK,

DPAK, I²PAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

650

VGS

Gate-source voltage

Drain current (continuous) at TC = 25 °C

8.5

8.5 (1)

Limited only by maximum temperature allowed.

Drain current (continuous) at TC = 100 °C

5.4

5.4 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

34 (1)

PTOT

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

2.5

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

150

dv/dt (3)

ISD ≤ 8.5 A, di/dt ≤400 A/µs; VPeak < V(BR)DSS, VDD = 400 V

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

DPAK

IPAK

I²PAK TO-220 TO-220FP

Rthj-case

Thermal resistance junction-case

max

1.79

°C/W

Rthj-amb

Thermal resistance junction-

ambient max

100

62.5

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb

max

°C/W

Maximum lead temperature for

soldering purpose

300

°C

STP12N65M5 Scheda tecnica(PDF) 3 Page - STMicroelectronics

STP12N65M5 Scheda tecnica(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

Scheda tecnica Scarica

Link URL