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MBR20100CT Scheda tecnica(PDF) 2 Page - ON Semiconductor |
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MBR20100CT Scheda tecnica(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() MBR2080CT, MBR2090CT, MBR20100CT http://onsemi.com 2 MAXIMUM RATINGS (Per Diode Leg) Rating Symbol MBR Unit 2080CT 2090CT 20100CT Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 80 90 100 V Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature (Note 1) TJ *65 to +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms THERMAL CHARACTERISTICS Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient RqJC RqJA 2.0 60 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TC = 125°C) (iF = 10 Amps, TC = 25°C) (iF = 20 Amps, TC = 125°C) (iF = 20 Amps, TC = 25°C) vF 0.75 0.85 0.85 0.95 V Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR 6.0 0.1 mA 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device Package Shipping† MBR2080CT TO−220 50 Units / Rail MBR2080CTG TO−220 (Pb−Free) MBR2090CT TO−220 50 Units / Rail MBR2090CTG TO−220 (Pb−Free) MBR20100CT TO−220 50 Units / Rail MBR20100CTG TO−220 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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