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PMEG6002EB115 Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte PMEG6002EB115
Spiegazioni elettronici  Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in ultra small and flat lead Surface-Mounted Device (SMD) plastic packages
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

PMEG6002EB115 Scheda tecnica(HTML) 4 Page - NXP Semiconductors

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PMEG6002EB_PMEG6002TV_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 24 November 2006
4 of 10
NXP Semiconductors
PMEG6002EB; PMEG6002TV
0.2 A very low VF MEGA Schottky barrier rectifiers
6.
Thermal characteristics
[1]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4]
Soldering point of cathode tab.
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
PMEG6002EB
[1][2] -
-
400
K/W
PMEG6002TV
[1][2] -
-
416
K/W
[1][3] -
-
318
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[4]
PMEG6002EB
-
-
75
K/W
PMEG6002TV
-
-
195
K/W
Table 8.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
[1]
IF = 0.1 mA
-
130
170
mV
IF = 1 mA
-
190
230
mV
IF = 10 mA
-
260
300
mV
IF = 100 mA
-
420
470
mV
IF = 200 mA
-
540
600
mV
IR
reverse current
VR =10V
-
2
10
µA
VR = 60 V
-
20
100
µA
VR = 10 V; Tamb = 100 °C
-
310
-
µA
Cd
diode capacitance
VR = 1 V; f = 1 MHz
-
14
20
pF



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