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STB30N65M5 Scheda tecnica(PDF) 8 Page - STMicroelectronics

Il numero della parte STB30N65M5
Spiegazioni elettronici  N-channel 650 V, 0.125 Ω, 22 A, MDmesh™V Power MOSFET D²PAK, TO-220FP, I²PAK, TO-220, TO-247
PDF  22 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB30N65M5 Scheda tecnica(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STB/F/I/P/W30N65M5
8/22
Doc ID 15331 Rev 3
Figure 14.
Normalized gate threshold voltage
vs temperature
Figure 15.
Normalized on resistance vs
temperature
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized BVDSS vs temperature
Figure 18.
Switching losses vs gate resistance
(1)
1.
Eon including reverse recovery of a SiC diode
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
AM05473v1
RDS(on)
1.7
1.5
0.9
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.7
1.1
1.3
1.9
2.1
AM05474v1
VSD
0
20
ISD(A)
(V)
10
50
30
40
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ=-50°C
TJ=150°C
TJ=25°C
AM05475v1
BVDSS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.93
0.95
0.97
0.99
1.01
1.03
125
1.05
1.07
AM05467v1
E
150
100
50
0
0
20
RG(
Ω)
(
μJ)
10
30
200
250
300
40
ID=14A
VCL=400V
VGS=10V
Eon
Eoff
AM05472v1



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