IRFS3307PBF datasheet(2/11 Pages) IRF

2 / 11 page

IRFB/S/SL3307PbF

www.irf.com

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Package limitation current is 75A.

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.096mH

RG = 25, IAS = 75A, VGS =10V. Part not recommended for use

above this value.

ISD  75A, di/dt  530A/μs, VDD V(BR)DSS, TJ  175°C.

Pulse width  400μs; duty cycle  2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended

footprint and soldering techniques refer to application note #AN-994.

R is measured at TJ approximately 90°C.

RJC (end of life) for D2Pak and TO-262 = 0.75°C/W. Note: This is the

maximum measured value after 1000 temperature cycles from -55 to 150°C

and is accounted for by the physical wearout of the die attach medium.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

––– 0.069 –––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

5.0

6.3



VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

IDSS

Drain-to-Source Leakage Current

–––

μA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

200

Gate-to-Source Reverse Leakage

–––

-200

Gate Input Resistance

–––

1.5

–––



f = 1MHz, open drain

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

–––

Total Gate Charge

–––

120

180

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

120

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

Ciss

Input Capacitance

–––

5150 –––

Coss

Output Capacitance

–––

460

–––

Crss

Reverse Transfer Capacitance

–––

250

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related) –––

570

–––

Coss eff. (TR) Effective Output Capacitance (Time Related)h –––

700

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

––– 130

(Body Diode)

ISM

Pulsed Source Current

–––

510

(Body Diode)

Ãd

VSD

Diode Forward Voltage

–––

1.3

dv/dt

Peak Diode Recovery

–––

V/ns

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 64V,

–––

TJ = 125°C

IF = 75A

Qrr

Reverse Recovery Charge

–––

nC TJ = 25°C

di/dt = 100A/μs

–––

130

TJ = 125°C

IRRM

Reverse Recovery Current

–––

2.8

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

TJ = 25°C, IS = 75A, VGS = 0V g

integral reverse

p-n junction diode.

VGS = 0V, VDS = 0V to 60V h,See Fig. 5

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 1mAd

VGS = 10V, ID = 75A g

VDS = VGS, ID = 150μA

VDS = 75V, VGS = 0V

VDS = 75V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

VDS = 60V

Conditions

VGS = 10V g

VGS = 0V

VDS = 50V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 60V i, See Fig.11

Conditions

VDS = 50V, ID = 75A

ID = 75A

VGS = 20V

VGS = -20V

TJ = 175°C, IS = 75A, VDS = 75V f

ID = 75A

RG = 3.9

VGS = 10V g

VDD = 48V

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