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IRFH4253DPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFH4253DPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 12 page  IRFH4253DPbF 1 www.irf.com © 2013 International Rectifier June 10, 2013 HEXFET® Power MOSFET Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH4253DPbF Dual PQFN 5mm x 6mm Tape and Reel 4000 IRFH4253DTRPbF Q1 Q2 VDSS 25 25 V RDS(on) max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 45 45 A Features Benefits Control and synchronous MOSFETs in one package Increased power density Low charge control MOSFET (10nC typical) Lower switching losses Low RDSON synchronous MOSFET (<1.45m) results in Lower conduction losses RoHS Compliant, Halogen-Free Environmentally friendlier MSL2, Industrial Qualification Increased reliability Intrinsic Schottky Diode with Low Forward Voltage on Q2 Lower Switching Losses Notes through are on page 12 Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 64 145 A ID @ TC = 70°C Continuous Drain Current, VGS @ 4.5V 51 116 ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V (Source Bonding Technology Limited) 45 45 IDM Pulsed Drain Current 120 580 PD @TC = 25°C Power Dissipation 31 50 W PD @TC = 70°C Power Dissipation 20 32 Linear Derating Factor 0.25 0.40 W/°C TJ Operating Junction and °C TSTG Storage Temperature Range -55 to + 150 Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Parameter Q1 Max. Q2 Max. Units RJC (Bottom) Junction-to-Case 4.0 2.5 RJC (Top) Junction-to-Case 20 13 °C/W RJA Junction-to-Ambient 34 38 RJA (<10s) Junction-to-Ambient 24 24 Thermal Resistance |
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