STF5N95K3 datasheet(4/23 Pages) STMICROELECTRONICS

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Electrical characteristics

STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3

4/23

DocID15696 Rev 3

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

950

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 950 V

VDS = 950 V, TC=125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 2 A

3.5

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

460

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-1

Co(tr)

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

VDS = 0 to 760 V, VGS = 0

970

Co(er)

(2)

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

VDS = 0 to 760 V, VGS = 0

Gate input resistance

f=1 MHz , ID = 0

5.5

Total gate charge

VDD = 760 V, ID = 4 A,

VGS = 10 V

(see Figure 20)

-19

Qgs

Gate-source charge

4.7

Qgd

Gate-drain charge

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