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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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STM8AF6178 Scheda tecnica(PDF) 70 Page - STMicroelectronics |
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STM8AF6178 Scheda tecnica(HTML) 70 Page - STMicroelectronics |
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70 / 110 page  Electrical characteristics STM8AF52/62xx, STM8AF51/61xx 70/110 Doc ID 14395 Rev 9 Table 39. Data memory Symbol Parameter Condition Min Max Unit TWE Temperature for writing and erasing — -40 150 °C NWE Data memory endurance(1) (erase/write cycles) 1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a write/erase operation addresses a single byte. TA = 25 °C 300 k — cycles TA = -40°C to 125 °C 100 k(2) 2. More information on the relationship between data retention time and number of write/erase cycles is available in a separate technical document. — tRET Data retention time TA = 25 °C 40(2)(3) 3. Retention time for 256B of data memory after up to 1000 cycles at 125 °C. — years TA = 55 °C 20(2)(3) — |
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