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RB520CS30L Scheda tecnica(PDF) 8 Page - NXP Semiconductors |
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RB520CS30L Scheda tecnica(HTML) 8 Page - NXP Semiconductors |
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8 / 14 page ![]() RB520CS30L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 10 March 2011 8 of 14 NXP Semiconductors RB520CS30L 100 mA low VF MEGA Schottky barrier rectifier 8. Test information The current ratings for the typical waveforms as shown in Figure 9, 10 and 11 are calculated according to the equations: with IM defined as peak current, at DC, and with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. Tj = 150 °C (1) δ =1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 11. Average forward current as a function of solder point temperature; typical values Tsp (°C) 0 50 100 150 175 125 75 25 006aac543 0.05 0.10 0.15 IF(AV) (A) 0.00 (1) (2) (3) (4) Fig 12. Duty cycle definition t1 t2 P t 006aaa812 duty cycle δ = t1 t2 I FAV () I M δ × = I RMS I FAV () = I RMS I M δ × = |
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