STB40NS15 datasheet(3/13 Pages) STMICROELECTRONICS

Il numero della parte	STB40NS15

Spiegazioni elettronici	N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY™ Power MOSFET

PDF	13 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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STB40NS15

Electrical ratings

3/13

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

150

VDGR

Drain-gate voltage (RGS = 20 kΩ)

150

VGS

Gate- source voltage

± 20

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

160

Ptot

Total dissipation at TC = 25°C

300

Derating Factor

W/°C

dv/dt

Peak diode recovery avalanche energy

V/ns

Tstg

Storage temperature

-65 to 175

°C

Max. operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

value

Unit

Rthj-case

Thermal resistance junction-case max

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

350

Obsolete

Product(s)

- Obsolete

Product(s)

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