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2N5671 Scheda tecnica(PDF) 2 Page - Comset Semiconductor

Il numero della parte 2N5671
Spiegazioni elettronici  HIGH CURRENT FAST SWITCHING APPLICATIONS
PDF  4 Pages
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Produttore elettronici  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

2N5671 Scheda tecnica(HTML) 2 Page - Comset Semiconductor

  2N5671_12 Datasheet HTML 1Page - Comset Semiconductor 2N5671_12 Datasheet HTML 2Page - Comset Semiconductor 2N5671_12 Datasheet HTML 3Page - Comset Semiconductor 2N5671_12 Datasheet HTML 4Page - Comset Semiconductor  
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NPN 2N5671 – 2N5672
09/11/2012
COMSET SEMICONDUCTORS
2 | 4
 
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
VCEO(SUS)
Collector-Emitter
Sustaining Voltage (*)
IC=200 mA, IB=0
2N5671
90
120
--
--
V
2N5672
VCER(SUS)
Collector-Emitter
Sustaining Voltage (*)
IC=0.2 A, RBE=50Ω
2N5671
110
140
--
--
V
2N5672
VCEX(SUS)
Collector-Emitter
Sustaining Voltage (*)
IC=0.2 A , VBE=-1.5V
RBE=50Ω
2N5671
120
150
--
--
V
2N5672
ICEO
Collector Cutoff Current VCE=80 V
2N5671
-
-
10
mA
2N5672
ICEX
Collector Cutoff Current
VCE=110 V, VEB=-1.5 V
2N5671
-
-
12
mA
VCE=135 V, VEB=-1.5 V
2N5672
-
-
10
VCE=100 V, VEB=-1.5 V
TC=150°C
2N5671
-
-
15
2N5672
-
-
10
IEBO
Emitter Cutoff Current
VBE=7.0 V, IC=0
2N5671
-
-
10
mA
2N5672
hFE
DC Current Gain (*)
IC=15 A, VCE=2.0 V
2N5671
20
-
100
-
2N5672
IC=20 A, VCE=5.0 V
2N5671
20
-
-
2N5672
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC=15 A, IB=1.2 A
2N5671
-
-
0.75
V
2N5672
VBE(SAT)
Base-Emitter saturation
Voltage (*)
IC=15 A, IB=1.2 A
2N5671
-
-
1.5
2N5672
VBE
Base-Emitter Voltage
(*)
IC=15 A, VCE=5.0 V
2N5671
-
-
1.6
V
2N5672
fT
Transition frequency
VCE=10 V, IC=2 A
2N5671
50
-
-
MHz
2N5672
Is/b
Second Breakdown
energy (**)
VCE=24 V
2N5671
5.8
-
-
A
VCE=45 V
2N5672
0.9
Es/b
Second Breakdown
energy
VBE=-4 V, RBE=20Ω
L=180µH
2N5671
20
-
-
mJ
2N5672
CBO
Collector-Base
Capacitance
IE= 0, VCB= 10 V
f = 1MHz
2N5671
-
-
900
pF
2N5672
 



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