2N6053_12 datasheet(1/3 Pages) COMSET

Il numero della parte	2N6053

Spiegazioni elettronici	POWER COMPLEMENTARY SILICON TRANSISTORS

PDF	3 Pages

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Produttore elettronici	COMSET [Comset Semiconductor]

Homepage	http://comset.halfin.com

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1 / 3 page

PNP 2N6053

17/10/2012

COMSET SEMICONDUCTORS

1 | 3

P

PO

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WE

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R C

CO

OM

MP

PL

LE

EM

ME

EN

NT

TA

AR

RY

Y S

SIIL

LIIC

CO

ON

N T

TR

RA

AN

NS

SIIS

ST

TO

OR

RS

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The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted

in Jedec TO-3 metal case.

They are inteded for use in power linear and low frequency switching applications.

The complementary NPN types are 2N6055.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCBO

Collector-Base Voltage

IE=0

2N6053

-60

V

VCEO

Collector-EmitterVoltage

IB=0

2N6053

-60

V

VEBO

Emitter-Base Voltage

IC=0

-5.0

V

IC

Collector Current

-8

A

ICM

Collector Peak Current

-16

A

IB

Base Current

-120

mA

PT

Power Dissipation

@ TC < 25°

100

W

TJ

Junction

Storage Temperature

200

°C

Ts

-65 to +200

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-C

Thermal Resistance, Junction to Case

1.17

°C/W

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