BDX64 – A – B – C

24/10/2012

COMSET SEMICONDUCTORS

1 | 4

P

P SILICON DARLINGTON POWER TRANSISTOR

The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package.

High current power darlingtons designed for power amplification and switching applications.

The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

BDX64

-60

V

BDX64A

-80

BDX64B

-100

BDX64C

-120

Collector-EmitterVoltage

BDX64

-60

V

BDX64A

-80

BDX64B

-100

BDX64C

-120

Emitter-Base Voltage

-5.0

V

Collector Current

-12

A

-16

Base Current

0.2

A

Power Dissipation

117

W

Junction Temperature

-55 to +200

°C

Storage Temperature

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.5

°C/W