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BU508DF Scheda tecnica(PDF) 2 Page - Comset Semiconductor |
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BU508DF Scheda tecnica(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page ![]() NPN BU508DF 15/10/2012 COMSET SEMICONDUCTORS 2 | 3 SEMICONDUCTORS ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO Collector-Emitter Breakdown Voltage IC= 100 mA, IB=0 L= 25mH 700 - - V ICES Collector Cutoff Current VBE =0, VCE = 1500 V - - 1 mA VBE =0, VCE = 1500 V Tj =125°C - - 2 IEBO Emitter Cutoff Current VEB= 5 V, IC=0 - - 300 mA VCE(SAT) Collector-Emitter saturation Voltage IC= 4.5 A, IB= 1.6 A - - 1 V VBE(SAT) Base-Emitter saturation Voltage IC= 4.5 A, IB= 2 A - - 1.1 VF Diode Forwardvoltage IF= 4.5 A - 1.6 2 V hFE DC Current Gain IC= 500 mA, VCE = 5 V 10 - 30 - COB Output Capacitance VCB = 10 V, IE=0, f= 1MHz 3 - - A fT Transition Frequency VCE= 5 V, IC= 100 mA - 7 - MHz |
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