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RJK6002DPE Scheda tecnica(PDF) 2 Page - Renesas Technology Corp

Il numero della parte RJK6002DPE
Spiegazioni elettronici  600V - 2A - MOS FET High Speed Power Switching
PDF  7 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK6002DPE Scheda tecnica(HTML) 2 Page - Renesas Technology Corp

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RJK6002DPE
Preliminary
R07DS0214EJ0100 Rev.1.00
Page 2 of 6
Jun 21, 2012
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
600
—
—
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
—
—
1
A
VDS = 600 V, VGS = 0
Gate to source leak current
IGSS
—
—
±0.1
A
VGS = 30 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
3.0
—
4.5
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance
RDS(on)
—
5.7
6.8
ID = 1 A, VGS = 10 V
Note4
Input capacitance
Ciss
—
165
—
pF
Output capacitance
Coss
—
20
—
pF
Reverse transfer capacitance
Crss
—
2.5
—
pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
—
28
—
ns
Rise time
tr
—
17
—
ns
Turn-off delay time
td(off)
—
47
—
ns
Fall time
tf
—
20
—
ns
ID = 1 A
VGS = 10 V
RL = 300 
Rg = 10
Total gate charge
Qg
—
9.2
—
nC
Gate to source charge
Qgs
—
1.2
—
nC
Gate to drain charge
Qgd
—
6.1
—
nC
VDD = 480 V
VGS = 10 V
ID = 2 A
Body-drain diode forward voltage
VDF
—
0.87
1.45
V
IF = 2 A, VGS = 0
Note4
Body-drain diode reverse recovery time
trr
—
260
—
ns
IF = 2 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test



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