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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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SI3443DVPBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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SI3443DVPBF Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 7 page  Si3443DVPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.7A, VGS = 0V trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = -1.7A Qrr Reverse Recovery Charge ––– 30 44 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics A -20 -2.0 S D G Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec. Starting TJ = 25°C, L = 6.8mH RG = 25Ω, IAS = -3.0A. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.005 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.034 0.065 VGS = -4.5V, ID = -4.4A ––– 0.053 0.090 Ω VGS = -2.7V, ID = -3.7A ––– 0.060 0.100 VGS = -2.5V, ID = -3.5A VGS(th) Gate Threshold Voltage -0.60 ––– -1.2 V VDS = VGS, ID = -250µA gfs Forward Transconductance ––– 12 ––– S VDS = -10V, ID = -4.4 A ––– ––– -1.0 µA VDS = -20V, VGS = 0V ––– ––– -5.0 VDS = -20V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 11 15 ID = -4.4A Qgs Gate-to-Source Charge ––– 2.2 ––– nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 2.9 ––– VGS = -4.5V td(on) Turn-On Delay Time ––– 12 50 VDD = -10V, VGS = -4.5V tr Rise Time ––– 33 60 ns ID = -1.0A td(off) Turn-Off Delay Time ––– 70 100 RG = 6.0 Ω tf Fall Time ––– 72 100 RD = 10 Ω, Ciss Input Capacitance ––– 1079 ––– VGS = 0V Coss Output Capacitance ––– 220 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 152 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current |
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