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STPS8L30H Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STPS8L30H Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() March 2006 Rev 4 1/7 7 STPS8L30 Low drop power Schottky rectifier Main product characteristics Features and benefits ■ Low cost device with low drop forward voltage for less power dissipation and reduced heatsink ■ Optimized conduction/reverse losses trade-off which leads to the highest yield in the application ■ High power surface mount miniature package ■ Avalanche capability specified Description Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in DPAK and IPAK, this device is especially intended for use as a Rectifier at the secondary of 3.3 V SMPS or DC/DC units. wheeling and polarity protection applications. Order codes IF(AV) 8 A VRRM 30 V Tj 150° C VF(max) 0.40 V Part Numbers Marking STPS8L30B LS30 STPS8L30B-TR LS30 STPS8L30H STPS8L30H A NC K A NC K K DPAK STPS8L30B IPAK STPS8L30H Table 1. Absolute Ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward voltage 7 A IF(AV) Average forward current Tc = 135° C δ = 0.5 8 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A IRRM Peak repetitive reverse current tp = 2 µs F = 1 kHz square 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 2 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25° C 3000 W Tstg Storage temperature range -65 to + 150 °C Tj Maximum operating junction temperature (1) 150 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs 1. thermal runaway condition for a diode on its own heatsink dPtot dTj --------------- 1 Rth j a – () -------------------------- > www.st.com |
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