16.02.2011

QL65I7SA

1 of 3

QL65I7SA

TECHNICAL DATA

Red Laser Diode

Features

• InGaAlP laser diode

• Peak Wavelength: 658 nm

• Optical Ouput Power: 30 mW

• Package: 5.6 mm, with Photo Diode

Electrical Connection

Pin Configuration

Bottom View

m-type

PIN

Function

1

LD Cathode

2

LD Anode, PD Cathode

3

PD Anode

Item

Symbol

Value

Unit

35

Optical Output Power

50

mW

LD Reverse Voltage

2

V

PD Reverse Voltage

30

V

Operating Case Temperature

-10 … +70

°C

Storage Temperature

-40 … +85

°C

Item

Symbol

Min.

Typ.

Max.

Unit

Optical Specifications

Optical Output Power (CW)

-

30

-

mW

Peak Wavelength

λ

P

-

658

665

nm

7.0

9.5

13.0

deg

FWHM Beam Divergence

18

22

26

deg

-

-

±3.0

deg

Emission Point Accuracy

Angle

-

-

±3.0

deg

Astigmatism

-

-

±60

µm

Electrical Specifications

Threshold Current

-

35

50

mA

Operating Current

-

65

100

mA

Slope Efficiency

η

0.7

1.0

1.3

W/A

Operating Voltage

-

2.0

2.4

V

Monitor Current

0.05

0.3

1.5

mA

The above specifications are for reference purpose only and subjected to change without prior notice.