2SC2618 datasheet(2/6 Pages) RENESAS

Il numero della parte	2SC2618

Spiegazioni elettronici	Silicon NPN Epitaxial

PDF	6 Pages

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Produttore elettronici	RENESAS [Renesas Technology Corp]

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2 / 6 page

2SC2618

Preliminary

R07DS0273EJ0300 Rev.3.00

Page 2 of 4

Mar 28, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

—

IC = 10 A, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

—

IC = 1 mA, RBE = 

Emitter to base breakdown voltage

V(BR)EBO

—

IE = 10 A, IC = 0

Collector cutoff current

ICBO

—

0.5

A

VCB = 20 V, IC = 0

DC current transfer ratio

hFE1*

100

—

320

VCE = 3 V, IC = 10 mA

(Pulse test)

hFE2

—

VCE = 3 V, IC = 500 mA

(Pulse test)

Collector to emitter saturation voltage

VCE(sat)

—

0.2

0.6

IC = 150 mA, IB = 15 mA

(Pulse test)

Base to emitter voltage

VBE

—

0.64

—

VCE = 3 V, IC = 10 mA

(Pulse test)

Note:

1. The 2SC2618 is grouped by hFE1 as follows.

Grade

Mark

hFE1

100 to 200

160 to 320

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