2

Symbol

Parameter

Units

Absolute Max.

Vdd, Vbias

Supply voltages, bias supply voltage

V

6.0

Vc

Control Voltage

V

(Vdd)

CW RF Input Power

dBm

20

W

8.0

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Thermal Resistance

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using Infra-

Red Measurement Technique.

derate the device power at 85.5mW per °C

rise in board temperature adjacent to

package bottom.

Electrical Specifications

, R3 = 300, R4 = 1.2k as shown in Figure 36), Vbyp = 0V, Iqtotal

= 500mA, RF performance at 2.4 GHz, IEEE 802.16e 64-QAM, ¾ rate FEC, 10MHz bandwidth OFDMA operation unless

otherwise stated.

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Vdd

Supply Voltage

V

5.0

Iqtotal

Quiescent Supply Current (normal high gain mode)

mA

500

Quiescent Supply Current (low gain mode, Vbyp = 5.0V)

mA

500

Gain

Gain

dB

35.0

38.5

OP1dB

Output Power at 1dB Gain Compression

dBm

35.5

Pout_5V

Linear Output Power @ 2.5% EVM with 64-QAM OFDMA

modulation per IEEE 802.16e specs, 50% duty cycle, ¾ rate FEC

dBm

27.7

29.2

Itotal_5V

Total current draw at Pout_5V level

mA

1023

1250

S11

Input Return Loss, 50

 source

dB

-10

S22

Output Return Loss, 50

 source

dB

-11

S12

Reverse Isolation

dB

60

Atten

Gain attenuation in low gain mode

dB

20.5

23.6

26.5

Vdet

Detector output DC voltage @ 29dBm linear Pout

V

2.6

DetR

Detector RF dynamic range

dB

20

NF

Noise figure

dB

2.1

S

Stability under load VSWR of 6:1 (all phase angle), spurious output

dBc

-60