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2SC5337 Scheda tecnica(PDF) 3 Page - Renesas Technology Corp

Il numero della parte 2SC5337
Spiegazioni elettronici  NPN Silicon RF Transistor for High-Frequency
PDF  7 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5337 Scheda tecnica(HTML) 3 Page - Renesas Technology Corp

  2SC5337 Datasheet HTML 1Page - Renesas Technology Corp 2SC5337 Datasheet HTML 2Page - Renesas Technology Corp 2SC5337 Datasheet HTML 3Page - Renesas Technology Corp 2SC5337 Datasheet HTML 4Page - Renesas Technology Corp 2SC5337 Datasheet HTML 5Page - Renesas Technology Corp 2SC5337 Datasheet HTML 6Page - Renesas Technology Corp 2SC5337 Datasheet HTML 7Page - Renesas Technology Corp  
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2SC5337
R09DS0047EJ0300 Rev.3.00
Page 3 of 5
Sep 14, 2012
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°C)
Mounted on Ceramic Substrate
(16 cm
2
× 0.7 mm (t) )
2.0
1.0
0
50
100
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
VCE = 10 V
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
100
50
10
100
0.1
1
10
1 000
f = 1 MHz
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
2.0
3.0
0.3
1.0
0.5
13
5
10
20
30
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
3
5
0.3
0.5
1
70 100
10
30
50
VCE = 10 V
f = 1 GHz
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
10
5
0
10
30
50 70 100
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
100
20
40
60
0
10
20
IB = 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
Remark The graphs indicate nominal characteristics.



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