ADP2108ACBZ-1.1-R7 datasheet(3/20 Pages) AD

3 / 20 page

Data Sheet

ADP2108

Rev. G | Page 3 of 20

SPECIFICATIONS

VIN = 3.6 V, VOUT = 1.8 V, TJ = −40°C to +125°C for minimum/maximum specifications, and TA = 25°C for typical specifications, unless

otherwise noted.1

Table 1.

Parameter

Test Conditions/Comments

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Input Voltage Range

2.3

5.5

Undervoltage Lockout Threshold

VIN rising

2.3

VIN falling

2.05

2.15

2.25

OUTPUT CHARACTERISTICS

Output Voltage Accuracy

PWM mode

−2

VIN = 2.3 V to 5.5 V, PWM mode

−2.5

+2.5

POWER SAVE MODE TO PWM CURRENT THRESHOLD

PWM TO POWER SAVE MODE CURRENT THRESHOLD

INPUT CURRENT CHARACTERISTICS

DC Operating Current

ILOAD = 0 mA, device not switching

µA

Shutdown Current

EN = 0 V, TA = TJ = −40°C to +125°C

0.2

1.0

µA

SW CHARACTERISTICS

SW On Resistance (WLCSP)

PFET

320

mΩ

NFET

300

mΩ

SW On Resistance (TSOT)

PFET

380

mΩ

NFET

260

mΩ

Current Limit

PFET switch peak current limit

1100

1300

1500

ENABLE CHARACTERISTICS

EN Input High Threshold

1.2

EN Input Low Threshold

0.4

EN Input Leakage Current

EN = 0 V, 3.6 V

−1

µA

OSCILLATOR FREQUENCY

ILOAD = 200 mA

2.5

3.0

3.5

MHz

START-UP TIME

550

µs

THERMAL CHARACTERISTICS

Thermal Shutdown Threshold

150

°C

Thermal Shutdown Hysteresis

°C

All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).

ADP2108ACBZ-1.1-R7 Scheda tecnica(PDF) 3 Page - Analog Devices

ADP2108ACBZ-1.1-R7 Scheda tecnica(HTML) 3 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Scheda tecnica Scarica

Link URL