2SC4227 datasheet(4/9 Pages) RENESAS

Il numero della parte	2SC4227

Spiegazioni elettronici	NPN EPITAXIAL SILICON RF TRANSISTOR

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Data Sheet PU10451EJ01V0DS

2SC4227

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0 mA

−

0.8

µA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

0.8

µA

DC Current Gain

hFE

Note 1

VCE = 3 V, IC = 7 mA

−

240

−

RF Characteristics

Gain Bandwidth Product

VCE = 3 V, IC = 7 mA

4.5

7.0

–

GHz

Insertion Power Gain

S21e2 VCE = 3 V, IC = 7 mA, f = 1 GHz

−

Noise Figure

VCE = 3 V, IC = 7 mA, f = 1 GHz

−

1.4

2.7

Reverse Transfer Capacitance

Cre

Note 2

VCB = 3 V, IE = 0 mA, f = 1 MHz

−

0.45

0.9

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

R33

R34

R35

Marking

R33

R34

R35

hFE Value

40 to 90

70 to 150

110 to 240

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