DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P10938EJ2V0DS00 (2nd edition)

Date Published August 2001 NS CP(K)

Printed in Japan

©

1996, 2001

NPN SILICON RF TRANSISTOR

2SC5336

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

4-PIN POWER MINIMOLD

The mark

•

•

•

• shows major revised points.

FEATURES

• High gain:

• 4-pin power minimold package with improved gain from the 2SC3357

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5336

25 pcs (Non reel)

• Magazine case

2SC5336-T1

1 kpcs/reel

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 25 pcs.

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

Note

1.2

W

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on 16 cm

2

× 0.7 mm (t) ceramic substrate (Copper plating)

Because this product uses high-frequency technology, avoid excessive static electricity, etc.